DatasheetsPDF.com

APT40M70JVR

Advanced Power Technology
Part Number APT40M70JVR
Manufacturer Advanced Power Technology
Description Power MOSFET
Published Apr 23, 2005
Detailed Description APT40M70JVR 400V 53A 0.070Ω S G D S POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancemen...
Datasheet PDF File APT40M70JVR PDF File

APT40M70JVR
APT40M70JVR

Overview
APT40M70JVR 400V 53A 0.
070Ω S G D S POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
SO ISOTOP ® 2 T- 27 "UL Recognized" • Faster Switching • Lower Leakage • 100% Avalanche Tested • Popular SOT-227 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified.
APT40M70JVR UNIT Volts Amps 400 53 212 ±30 ±40 450 3.
6 -55 to 150 300 53 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 Volts ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)