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APT5017BLC

Advanced Power Technology
Part Number APT5017BLC
Manufacturer Advanced Power Technology
Description Power MOSFET
Published Apr 23, 2005
Detailed Description 500V 30A 0.170W APT5017BLC APT5017SLC BLC D3PAK TO-247 POWER MOS VITM Power MOS VITM is a new generation of low gate c...
Datasheet PDF File APT5017BLC PDF File

APT5017BLC
APT5017BLC

Overview
500V 30A 0.
170W APT5017BLC APT5017SLC BLC D3PAK TO-247 POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.
Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds.
• Identical Specifications: TO-247 or Surface Mount D3PAK Package • Lower Gate Charge & Capacitance • Easier To Drive • 100% Avalanche Tested • Faster switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter SLC D G S All Ratings: TC = 25°C unless otherwise specified.
APT5017 UNIT Volts Amps Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy L A C I N H C N E T O I D T E A C M N R A O V F AD IN 500 30 120 ±30 ±40 370 2.
96 300 30 30 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/°C °C Amps mJ 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 500 26 0.
170 25 250 ±100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.
5 ID[Cont.
]) Ohms µA nA Volts 050-5917 Rev - 11-99 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.
8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Sho...


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