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APT50M38JFLL

Advanced Power Technology
Part Number APT50M38JFLL
Manufacturer Advanced Power Technology
Description Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Published Apr 23, 2005
Detailed Description APT50M38JFLL 500V 91A S G D 0.038W S POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high volta...
Datasheet PDF File APT50M38JFLL PDF File

APT50M38JFLL
APT50M38JFLL

Overview
APT50M38JFLL 500V 91A S G D 0.
038W S POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg.
Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
• Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage SO ISOTOP ® 2 T- 27 "UL Recognized" • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE D G S All Ratings: TC = 25°C unless otherwise specified.
APT50M38JFLL UNIT Volts Amps Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy L A C I N H C N E T O I E T C MA N A OR V AD INF 500 91 364 ±30 ±40 775 6.
2 -55 to 150 300 91 50 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/°C °C Amps mJ 3600 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 500 91 0.
038 250 1000 ±100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.
5 ID[Cont.
]) Ohms µA nA Volts 050-7030 Rev - 3-2001 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.
8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA...


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