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APT50M50PVR

Advanced Power Technology
Part Number APT50M50PVR
Manufacturer Advanced Power Technology
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Published Apr 23, 2005
Detailed Description APT50M50PVR 500V 74.5A 0.050Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode...
Datasheet PDF File APT50M50PVR PDF File

APT50M50PVR
APT50M50PVR


Overview
APT50M50PVR 500V 74.
5A 0.
050Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
P-Pack • Faster Switching • Lower Leakage • 100% Avalanche Tested • New High Power P-Pack Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage All Ratings: TC = 25°C unless otherwise specified.
APT50M50PVR UNIT Volts Amps 500 1 RY A IN IM MIN Continuous Drain Current @ TC = 25°C Pulsed Drain Current 74.
5 298 ±30 ±40 625 5.
0 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Volts Watts W/°C °C Amps mJ Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 -55 to 150 300 74.
5 50 3600 (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions TYP MAX UNIT Volts Amps Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current 2 PR EL 4 500 74.
5 0.
050 100 500 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.
5 ID[Cont.
]) Ohms µA nA Volts 050-5836 Rev - Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.
8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) APT Website - http://www.
advancedpower.
com Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
USA 405 ...


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