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APT50M60L2VFR

Advanced Power Technology
Part Number APT50M60L2VFR
Manufacturer Advanced Power Technology
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Published Apr 23, 2005
Detailed Description APT50M60L2VFR 500V 77A 0.060W POWER MOS V ® FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Cha...
Datasheet PDF File APT50M60L2VFR PDF File

APT50M60L2VFR
APT50M60L2VFR

Overview
APT50M60L2VFR 500V 77A 0.
060W POWER MOS V ® FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
• TO-264 MAX Package • Lower Leakage • Fast Recovery Body Diode MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage • Faster Switching • 100% Avalanche Tested G D S All Ratings: TC = 25°C unless otherwise specified.
APT50M60L2VFR UNIT Volts Amps Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Ener...


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