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APT50M80B2LC

Advanced Power Technology
Part Number APT50M80B2LC
Manufacturer Advanced Power Technology
Description Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
Published Apr 23, 2005
Detailed Description APT50M80B2LC APT50M80LLC 500V 58A 0.080W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high vol...
Datasheet PDF File APT50M80B2LC PDF File

APT50M80B2LC
APT50M80B2LC

Overview
APT50M80B2LC APT50M80LLC 500V 58A 0.
080W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.
Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds.
• Identical Specifications: T-MAX™ or TO-264 Package • Lower Gate Charge & Capacitance • Easier To Drive • 100% Avalanche Tested • Faster switching MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter B2LC T-MAX™ TO-264 LLC D G S All Ratings: TC = 25°C unless otherwise specified.
APT50M80 UNIT Volts Amps Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy L A C I N H C N E T O I D T E A C M N R A O V F D N A I 500 58 232 ±30 ±40 625 5.
0 -55 to 150 300 58 50 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/°C °C Amps mJ 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 500 58 0.
080 25 250 ±100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.
5 ID[Cont.
]) Ohms µA nA Volts rev- 12-99 050-5933 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.
8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.
5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should...


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