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APT6011B2VFR

Part Number	APT6011B2VFR
Manufacturer	Advanced Power Technology
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Published	Apr 23, 2005
Detailed Description	APT6011B2VFR 600V 49A 0.110W POWER MOS V ® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel ...
Datasheet	APT6011B2VFR PDF File

Overview

APT6011B2VFR 600V 49A 0.
110W POWER MOS V ® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
• Fast Recovery Body Diode • Lower Leakage • Popular T-MAX™ Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter • 100% Avalanche Tested • Faster Switching G D S All Ratings: TC = 25°C unless otherwise specified.
APT6011B2VFR UNIT Volts Amps Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy L A C I N H C N E T O I D T E A C M N R A O V F D A IN 600 49 196 ±30 ±40 625 5.
0 -55 to 150 300 49 50 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/°C °C Amps mJ 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 600 49 0.
110 250 1000 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.
5 ID[Cont.
]) Ohms µA nA Volts 050-8061 rev- 01-2000 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.
8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.
5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
APT Website - http://www.
advancedpower.
com USA EUROPE 405 S.
W.
Columbia Street ...

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