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APT6027HVR

Advanced Power Technology
Part Number APT6027HVR
Manufacturer Advanced Power Technology
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Published Apr 23, 2005
Detailed Description APT6027HVR 600V 20A 0.270Ω POWER MOS V ® TO-258 Power MOS is a new generation of high voltage N-Channel enhancement mo...
Datasheet PDF File APT6027HVR PDF File

APT6027HVR
APT6027HVR

Overview
APT6027HVR 600V 20A 0.
270Ω POWER MOS V ® TO-258 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
V® • Faster Switching • Lower Leakage • 100% Avalanche Tested • Popular TO-258 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified.
APT6025BVR UNIT Volts Amps 600 20 80 ±30 ±40 250 2.
0 -55 to 150 300 20 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-...


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