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APT6033BN

Advanced Power Technology
Part Number APT6033BN
Manufacturer Advanced Power Technology
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Published Apr 23, 2005
Detailed Description D TO-247 G S APT6030BN 600V ® 23.0A 0.30Ω 22.0A 0.33Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG...
Datasheet PDF File APT6033BN PDF File

APT6033BN
APT6033BN

Overview
D TO-247 G S APT6030BN 600V ® 23.
0A 0.
30Ω 22.
0A 0.
33Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT6033BN 600V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified.
APT 6030BN APT 6033BN UNIT Volts Amps 600 23 92 ± 30 360 2.
9 600 22 88 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
1 Volts Watts W/°C °C -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current 2 MIN APT6030BN APT6033BN APT6030BN APT6033BN APT6030BN APT6033BN TYP MAX UNIT Volts 600 600 23 Amps ID(ON) (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, ...


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