DatasheetsPDF.com

APT60M75L2LL

Advanced Power Technology
Part Number APT60M75L2LL
Manufacturer Advanced Power Technology
Description Power MOS 7 MOSFET
Published Apr 23, 2005
Detailed Description APT60M75L2LL 600V 73A 0.075Ω POWER MOS 7 R MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channe...
Datasheet PDF File APT60M75L2LL PDF File

APT60M75L2LL
APT60M75L2LL

Overview
APT60M75L2LL 600V 73A 0.
075Ω POWER MOS 7 R MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Both conduction and switching losses are addressed and Qg.
Power MOS with Power MOS 7® by significantly lowering 7® combines lower conduction and switching RDS(ON) losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
• Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • Popular TO-264 MAX Package TO-264 Max D G S MAXIMUM RATINGS Symbol Parameter All Ratings: TC = 25°C unless otherwise specified.
APT60M75L2LL UNIT VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 600 73 292 ±30 ±40 893 7.
14 -55 to 150 300 73 50 3200 Volts Amps Volts Watts W/°C °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BVDSS RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 36.
5A) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) 600 3 0.
075 100 500 ±100 5 CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
Volts Ohms µA nA Volts APT Website - http://www.
advancedpower.
com 050-7097 Rev B 9-2004 DYNAMIC CHARACTERISTICS APT60M75L2LL Symb...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)