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APT8015JVR

Advanced Power Technology
Part Number APT8015JVR
Manufacturer Advanced Power Technology
Description Power MOSFET
Published Apr 23, 2005
Detailed Description APT8015JVR 800V 44A 0.150Ω S G D S POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement...
Datasheet PDF File APT8015JVR PDF File

APT8015JVR
APT8015JVR


Overview
APT8015JVR 800V 44A 0.
150Ω S G D S POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
SO ISOTOP ® 2 T- 27 "UL Recognized" • Faster Switching • Lower Leakage • 100% Avalanche Tested • Popular SOT-227 Package G D S Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 APT8015JVR UNIT Volts Amps 800 44 176 ±30 ±40 700 5.
6 -55 to 150 300 44 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitiv...



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