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APT8075BN

Advanced Power Technology
Part Number APT8075BN
Manufacturer Advanced Power Technology
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Published Apr 23, 2005
Detailed Description D TO-247 G S APT8075BN 800V ® 13.0A 0.75Ω 12.0A 0.90Ω POWER MOS IV MAXIMUM RATINGS Symbol V DSS ID IDM V GS PD TJ,TS...
Datasheet PDF File APT8075BN PDF File

APT8075BN
APT8075BN

Overview
D TO-247 G S APT8075BN 800V ® 13.
0A 0.
75Ω 12.
0A 0.
90Ω POWER MOS IV MAXIMUM RATINGS Symbol V DSS ID IDM V GS PD TJ,TSTG TL Parameter Drain-Source Voltage APT8090BN 800V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise specified.
APT 8075BN APT 8090BN UNIT Volts Amps 800 13 56 ±30 310 2.
48 800 12 48 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
1 Volts Watts W/°C °C -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current 2 MIN APT8075BN APT8090BN APT8075BN APT8090BN APT8075BN APT8090BN TYP MAX UNIT Volts 800 800 13 Amps ID(ON) (VDS > ID(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.
5 ID [Cont.
]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 2 12 0.
75 Ohms RDS(ON) 0.
90 250 1000 ±100 2 4 µA nA Volts IDSS IGSS V GS(TH) Zero Gate Voltage Drain Current (VDS = 0.
8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ± 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, I D = 1.
0mA) THERMAL CHARACTERISTICS Symbol RθJC R θJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 050-8007 Rev C 0.
40 40 CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
USA 405 S.
W.
Columbia Street Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.
F.
Kennedy Bât B4 Parc Cadéra Nord DYNAMIC CHARACTERISTICS Symbol Ciss C oss Crss Qg Q gs Qgd td (on) tr td (off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT8075/809...


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