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HYB511000BJ-50

Siemens
Part Number HYB511000BJ-50
Manufacturer Siemens
Description 1 M x 1-Bit Dynamic RAM Low Power 1 M 1-Bit Dynamic RAM
Published Apr 23, 2005
Detailed Description 1 M × 1-Bit Dynamic RAM Low Power 1 M × 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 Advanced In...
Datasheet PDF File HYB511000BJ-50 PDF File

HYB511000BJ-50
HYB511000BJ-50

Overview
1 M × 1-Bit Dynamic RAM Low Power 1 M × 1-Bit Dynamic RAM HYB 511000BJ-50/-60/-70 HYB 511000BJL-50/-60/-70 Advanced Information 1 048 576 words by 1-bit organization Fast access and cycle time 50 ns access time 95 ns cycle time (-50 version) 60 ns access time 130 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) • Fast page mode cycle time 35 ns (-50 version) 40 ns (-60 version) 45 ns (-70 version) • Low power dissipation max.
495 mW active (-50 version) max.
440 mW active (-60 version) max.
385 mW active (-70 version) max.
5.
5 mW standby max.
1.
1 mW standby for L-version • • • • • • • • • Single + 5 V (± 10 %) supply with a built-in VBB generator Output unlatched at cycle end allows twodimensional chip selection Common I/O capability using “early write” operation Read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden-refresh, fast page mode capability and test mode capability All inputs, outputs and clocks TTL-compatible 512 refresh cycles/8 ms 512 refresh cycles/64 ms for L-version only Plastic Packages: P-SOJ-26/20-1 Ordering Information Type HYB 511000BJ-50 HYB 511000BJ-60 HYB 511000BJ-70 HYB 511000BJL-50 HYB 511000BJL-60 HYB 511000BJL-70 Ordering Code Q67100-Q1056 Q67100-Q518 Q67100-Q519 on request Q67100-Q526 Q67100-Q527 Package P-SOJ-26/20-1 P-SOJ-26/20-1 P-SOJ-26/20-1 P-SOJ-26/20-1 P-SOJ-26/20-1 P-SOJ-26/20-1 Description DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) Semiconductor Group 33 01.
95 HYB 511000BJ/BJL-50/-60/-70 1 M × 1-DRAM The HYB 511000BJ/BJL is the new generation dynamic RAM organized as 1 048 576 words by 1-bit.
The HYB 511000BJ/BJL utilizes CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user.
Multiplexed address inputs permit the HYB 511000BJ/BJL to be packaged in a standard plastic P-SOJ-26/...


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