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HYB5116165BJ-70

Siemens
Part Number HYB5116165BJ-70
Manufacturer Siemens
Description 1M x 16-Bit Dynamic RAM 1k & 4k Refresh
Published Apr 23, 2005
Detailed Description 1M x 16-Bit Dynamic RAM 1k & 4k Refresh (Hyper Page Mode- EDO) Advanced Information • • • HYB5116165BSJ -50/-60/-70 HYB...
Datasheet PDF File HYB5116165BJ-70 PDF File

HYB5116165BJ-70
HYB5116165BJ-70

Overview
1M x 16-Bit Dynamic RAM 1k & 4k Refresh (Hyper Page Mode- EDO) Advanced Information • • • HYB5116165BSJ -50/-60/-70 HYB5118165BSJ -50/-60/-70 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/Write cycle time Hyper page mode (EDO) cycle time 50 13 25 84 20 -60 60 15 30 104 25 -70 70 20 35 124 30 ns ns ns ns ns • • • • • • • • • Single + 5 V (± 10 %) supply Low power dissipation max.
1100 active mW ( HYB5118165BSJ-50) max.
990 active mW ( HYB5118165BSJ-60) max.
880 active mW ( HYB5118165BSJ-70) max.
550 active mW ( HYB5116165BSJ-50) max.
495 active mW ( HYB5116165BSJ-60) max.
440 active mW ( HYB5116165BSJ-70) 11 mW standby (TTL) 5.
5.
mW standby (MOS) Output unlatched at cycle end allows two-dimensional chip selection Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh and Self Refresh Hyper page mode (EDO) capability All in...


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