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HYB5116405BJ-70

Siemens
Part Number HYB5116405BJ-70
Manufacturer Siemens
Description 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
Published Apr 23, 2005
Detailed Description 4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode- EDO) Advanced Information 4 194 304 words by 4-bit organization...
Datasheet PDF File HYB5116405BJ-70 PDF File

HYB5116405BJ-70
HYB5116405BJ-70

Overview
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode- EDO) Advanced Information 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/Write cycle time Hyper page mode (EDO) cycle time 50 13 25 84 20 HYB5116405BJ/BT -50/-60/-70 HYB5117405BJ/BT -50/-60/-70 • • • -60 60 15 30 104 25 -70 70 20 35 124 30 ns ns ns ns ns • • • • • • • • • Single + 5 V (± 10 %) supply Low power dissipation max.
550 mW active (HYB5116405BJ/BT-50) max.
495 mW active (HYB5116405BJ/BT-60) max.
440 mW active (HYB5116405BJ/BT-70) max.
660 mW active (HYB5117405BJ/BT-50) max.
605 mW active (HYB5117405BJ/BT-60) max.
550 mW active (HYB5117405BJ/BT-70) 11 mW standby (TTL) 5.
5.
mW standby (MOS) Output unlatched at cycle end allows two-dimensional chip selection Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh, self refresh and test mode Hyper page mode (ED...


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