DatasheetsPDF.com

HYB514100BJ-60

Siemens
Part Number HYB514100BJ-60
Manufacturer Siemens
Description 4M x 1-Bit Dynamic RAM
Published Apr 23, 2005
Detailed Description 4M × 1-Bit Dynamic RAM HYB 514100BJ-50/-60 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 °C o...
Datasheet PDF File HYB514100BJ-60 PDF File

HYB514100BJ-60
HYB514100BJ-60

Overview
4M × 1-Bit Dynamic RAM HYB 514100BJ-50/-60 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 °C operating temperature • Fast Page Mode Operation • Performance: -50 -60 60 15 30 110 40 ns ns ns ns ns tRAC RAS access time tCAC CAS access time tAA tRC tPC Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 95 35 • Single + 5 V (± 10 %) supply with a built-in VBB generator • Low power dissipation max.
660 mW active (-50 version) max.
605 mW active (-60 version) • Standby power dissipation: 11 mW max.
standby (TTL) 5.
5 mW max.
standby (CMOS) • Output unlatched at cycle end allows two-dimensional chip selection • Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh and test mode capability • All inputs and outputs TTL-compatible • 1024 refresh cycles/16 ms • Plastic Packages: P-SOJ-26/20-2 with 300 mil width Semiconductor Group 1 1998-10-01 HYB 514100BJ-50/-60 4M × 1 DRAM The HYB 514100BJ is the new generation dynamic RAM organized as 4 194 304 words by 1-bit.
The HYB 514100BJ utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, both internally and for the system user.
Multiplexed address inputs permit the HYB 514100BJ to be packed in a standard plastic P-SOJ-26/20 package.
This package size provides high system bit densities and is compatible with commonly used automatic testing and insertion equipment.
System oriented features include single + 5 V (± 10 %) power supply, direct interfacing with high performance logic device families such as Schottky TTL.
Type HYB 514100BJ-50 HYB 514100BJ-60 Ordering Code Q67100-Q971 Q67100-Q759 Package P-SOJ-26/20-2 300 mil P-SOJ-26/20-2 300 mil Descriptions DRAM (access time 50 ns) DRAM (access time 60 ns) P-SOJ-26/20-2 V SS DO CAS N.
C.
A9 DI WE RAS N.
C.
A10 1 2 3 4 5 26 25 24 23 22 A0 A1 A2 A3 V CC 9 10 11 12 13 18 17 16 15 14 A8 A7 A6 A5 A4 SPP02808 Pin Configuration Pin Nam...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)