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HYB514256BJ-60

Part Number	HYB514256BJ-60
Manufacturer	Siemens
Description	256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
Published	Apr 23, 2005
Detailed Description	256 K × 4-Bit Dynamic RAM Low Power 256 K × 4-Bit Dynamic RAM HYB 514256B/BJ-50/-60/-70 HYB 514256BL/BJL-50/-60/-70 Ad...
Datasheet	HYB514256BJ-60 PDF File

Overview

256 K × 4-Bit Dynamic RAM Low Power 256 K × 4-Bit Dynamic RAM HYB 514256B/BJ-50/-60/-70 HYB 514256BL/BJL-50/-60/-70 Advanced Information 262 144 words by 4-bit organization • Fast access and cycle time 50 ns access time 95 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) • Fast page mode cycle time 35 ns (-50 version) 40 ns (-60 version) 45 ns (-70 version) • Low power dissipation max.
495 mW active (-50 version) max.
440 mW active (-60 version) max.
385 mW active (-70 version) max.
5.
5 mW standby max.
1.
1 mW standby for L-version • • • • • • • Single + 5 V (± 10 %) supply with a built-in VBB generator Output unlatched at cycle end allows twodimensional chip selection Read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden-refresh and fast page mode capability All inputs, outputs and clocks TTL-compatible 512 refresh cycles/8 ms 512 refresh cycles/64 ms for L-version only Plastic Packages: P-DIP-20-2, P-SOJ-26/20-1 Ordering Information Type HYB 514256B-50 HYB 514256B-60 HYB 514256B-70 HYB 514256BJ-50 HYB 514256BJ-60 HYB 514256BJ-70 HYB 514256BL-50 HYB 514256BL-60 HYB 514256BL-70 HYB 514256BJL-50 HYB 514256BJL-60 HYB 514256BJL-70 Ordering Code Q67100-Q1044 Q67100-Q530 Q67100-Q433 Q67100-Q1054 Q67100-Q536 Q67100-Q537 on request Q67100-Q542 Q67100-Q543 on request Q67100-Q608 Q67100-Q607 Package P-DIP-20-2 P-DIP-20-2 P-DIP-20-2 P-SOJ-26/20-1 P-SOJ-26/20-1 P-SOJ-26/20-1 P-DIP-20-2 P-DIP-20-2 P-DIP-20-2 P-SOJ-26/20-1 P-SOJ-26/20-1 P-SOJ-26/20-1 Description DRAM (access time 50ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) Semiconductor Group 55 01.
95 HYB 514256B/BL/BJ/BJL-50/-60/-70 256 K × 4-DRAM The HYB 514256B/BJ/BL/BJL is the new generation...

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