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HYR1825640G-745

Part Number	HYR1825640G-745
Manufacturer	Infineon
Description	Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs)
Published	Apr 23, 2005
Detailed Description	HYR16xx40G / HYR18xx40G Rambus RIMM Modules Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) Overview The Direct Rambus...
Datasheet	HYR1825640G-745 PDF File

Overview

HYR16xx40G / HYR18xx40G Rambus RIMM Modules Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) Overview The Direct Rambus™ RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required.
The Direct Rambus RIMM module consists of 288 Mbit Direct Rambus DRAM (Direct RDRAM™) devices.
These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits.
The use of Rambus Signaling Level (RSL) technology permits 600 MHz to 800 MHz transfer rates while using conventional system and board design technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.
25 ns per two bytes (10 ns per sixteen bytes).
The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed, memory transactions.
The separate control and data buses with independent...

Similar Datasheet

HYR1825640G-745 Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) - Infineon

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