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HZM68ZWA

Part Number	HZM68ZWA
Manufacturer	Hitachi
Description	Silicon Epitaxial Planar Zener Diode for Surge Absorb
Published	Apr 23, 2005
Detailed Description	HZM6.8ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-613A(Z) Rev 1 Jan. 1999 Features • HZM6.8ZWA ha...
Datasheet	HZM68ZWA PDF File

Overview

HZM6.
8ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-613A(Z) Rev 1 Jan.
1999 Features • HZM6.
8ZWA has two devices, and can absorb external + and -surge.
• Low capacitance (C=25pF max) and can protect ESD of signal line.
• MPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information Type No.
HZM6.
8ZWA Laser Mark 68Z Package Code MPAK Outline 3 2 1 (Top View) 1 Cathode 2 Cathode 3 Anode HZM6.
8ZWA Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °C 1.
Two device total, See Fig.
2.
Electrical Characteristics (Ta = 25°C) *1 Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2 Symbol VZ IR C rd  Min 6.
47    20 Typ      Max 7.
00 2 25 30  Unit V µA pF Ω kV Test Condition I Z = 5 mA, 40ms pulse VR = 3.
5V VR = 0V, f = 1 MHz I Z = 5 mA C =150pF, R = 330 Ω, Both fo...

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