MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54519P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
DESCRIPTION M54519P and M54519FP are seven-circuit Darlington transistor arrays. The circuits are made of NPNtransistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION
INPUT
IN1→ 1 IN2→ 2 IN3→ 3 IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7 GND 8 16 →O1 15 →O2 14 →O3 13 →O4 OUTPUT 12 →O5 11 →O6 10 →O7 9 NC
FEATURES High breakdown voltage (BV CEO ≥ 40V) High-current driving (Ic(max) = 400mA) Driving available with PMOS IC output Wide operating temperature range (Ta = –20 to +75°C)
16P4(P) Package type 16P2N-A(FP)
NC : No connection
CIRCUIT DIAGRAM APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
OUTPUT INPUT 20K
20K 2K GND
FUNCTION The M54519P and M54519FP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 20k Ω between input transistor bases and input pins. The output transistor emitters are all connected to the GND pin (pin 8). Collector current is 400mA maximum. Collector-emitter supply voltage is 40V maximum. The M54519FP is enclosed in a molded small flat package, enabling space-saving design.
The seven circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω
ABSOLUTE MAXIMUM RATINGS
Symbol VCEO IC VI Pd Topr Tstg Parameter Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature
(Unless otherwise noted, Ta = –20 ~ +75 °C)
Conditions Output, H Current per circuit output, L Ta = 25°C, when mounted on board
Ratings –0. 5 ~ +40 400 –0. 5 ~ +40 1. 47(P)/1. 00(FP) –20 ~ +75 –55 ~ +125
Unit V mA V W °C °C
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54519P/FP
7-UNIT 400mA DARLINGTON TRANS...
M54519FP PDF File
