MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54532P/FP
4-UNIT 1. 5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION M54532P and M54532FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPNtransistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION
COMMON COM 1 16 NC
OUTPUT1 O1← 2 INPUT1 IN1→ 3
15 →O4 OUTPUT4 14 ←IN4 INPUT4 13 12
4 GND 5
INPUT2 IN2→ 6
GND
11 ←IN3 INPUT3 10 →O3 OUTPUT3 9 NC
FEATURES High breakdown voltage (BV CEO ≥ 50V) High-current driving (Ic(max) = 1. 5A) With clamping diodes Wide operating temperature range (Ta = –20 to +75°C)
OUTPUT2 O2← 7 COMMON COM 8
16P4(P) Package type 16P2N-A(FP)
NC : No connection
APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and power amplification
CIRCUIT DIAGRAM
COM OUTPUT INPUT 340
FUNCTION The M54532P and M54532FP each have four circuits consisting of NPN Darlington transistors. They have resistance of 340 Ω between input transistor bases and input pins. A clamping diode is provided between each output pin (collector) and COM pin. The output transistor emitters are all connected to the GND pin. The collector current is 1. 5A maximum. Collector-emitter supply voltage is 50V maximum. The M54532FP is enclosed in a molded small flat package, enabling space-saving design.
5. 5K
3K
GND
The four circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω
ABSOLUTE MAXIMUM RATINGS
Symbol VCEO IC VI VR IF Pd Topr Tstg Parameter Collector-emitter voltage Collector current Input voltage
(Unless otherwise noted, Ta = –20 ~ +75 °C)
Conditions Output, H Current per circuit output, L
Ratings –0. 5 ~ +50 1. 5 –0. 5 ~ +10 50 1. 5 1. 25 1. 92(P)/1. 00(FP) –20 ~ +75 –55 ~ +125
Unit V A V V A W °C °C
Aug. 1999
Clamping diode reverse voltage Clamping diode forward current P...
M54532FP PDF File
