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29LV650

Fujitsu
Part Number 29LV650
Manufacturer Fujitsu
Description 64M (4M x 16) BIT
Published Apr 25, 2005
Detailed Description FUJITSU SEMICONDUCTOR DATA SHEET DS05-20882-2E FLASH MEMORY CMOS 64M (4M × 16) BIT MBM29LV650UE/651UE -90/12 s DESCRI...
Datasheet PDF File 29LV650 PDF File

29LV650
29LV650

Overview
FUJITSU SEMICONDUCTOR DATA SHEET DS05-20882-2E FLASH MEMORY CMOS 64M (4M × 16) BIT MBM29LV650UE/651UE -90/12 s DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.
0 V-only Flash memory organized as 4M words of 16 bits each.
The device is designed to be programmed in system with the standard system 3.
0 V VCC supply.
12.
0 V VPP and 5.
0 V VCC are not required for write or erase operations.
The devices can also be reprogrammed in standard EPROM programmers.
To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable (OE) controls.
The MBM29LV650UE/651UE is entirely command set compatible with JEDEC single-power-supply Flash standard.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine which controls the erase and programming circuitry.
Write cycles also internally latch addresses and data needed for the programming and erase operations.
Typically, each sector can be programmed and verified in about 0.
5 seconds.
(Continued) s PRODUCT LINEUP Part No.
VCC = 3.
3 V Ordering Part No.
VCC = 3.
0 V Max.
Address Access Time (ns) Max.
CE Access Time (ns) Max.
OE Access Time (ns) +0.
3 V –0.
3 V +0.
6 V –0.
3 V MBM29LV650UE/651UE 90 — 90 90 35 — 12 120 120 50 s PACKAGES 48-pin plastic TSOP (I) Marking Side Marking Side (FPT-48P-M19) (FPT-48P-M20) MBM29LV650UE/651UE-90/12 (Continued) A sector is typically erased and verified in 1.
0 second.
(If already completely preprogrammed.
) The device also features a sector erase architecture.
The sector mode allows each sector to be erased and reprogrammed without affecting other sectors.
The MBM29LV650UE/651UE is erased when shipped from the factory.
Internally generated and regulated voltages are provided for the program and erase operations.
A low VCC detector automatically inhibits write operations on the loss of power.
The end of program or erase is detected by Data Polling of DQ7, by the...


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