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K4E151611D

Samsung
Part Number K4E151611D
Manufacturer Samsung
Description 1M x 16Bit CMOS Dynamic RAM
Published Apr 25, 2005
Detailed Description K4E171611D, K4E151611D K4E171612D, K4E151612D CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION...
Datasheet PDF File K4E151611D PDF File

K4E151611D
K4E151611D

Overview
K4E171611D, K4E151611D K4E171612D, K4E151612D CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs.
Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.
Power supply voltage (+5.
0V or +3.
3V), refresh cycle (1K Ref.
or 4K Ref.
), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family.
All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
Furthermore, Selfrefresh operation is available in L-version.
This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced CMOS process to realize high band-width, low power consumption and high reliability.
It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
FEATURES • Part Identification - K4E171611D-J(T) (5V, 4K Ref.
) - K4E151611D-J(T) (5V, 1K Ref.
) - K4E171612D-J(T) (3.
3V, 4K Ref.
) - K4E151612D-J(T) (3.
3V, 1K Ref.
) • Active Power Dissipation Speed 4K -45 -50 -60 360 324 288 3.
3V 1K 540 504 468 4K 550 495 440 Unit : mW 5V 1K 825 770 715 • Extended Data Out Mode operation (Fast Page Mode with Extended Data Out) • 2 CAS Byte/Word Read/Write operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability • Self-refresh capability (L-ver only) • TTL(5V)/LVTTL(3.
3V) compatible inputs and outputs • Early Write or output enable controlled write • JEDEC Standard pinout • Available in plastic SOJ 400mil and TSOP(II) packages • Single +5V±10% power supply (5V product) • Single +3.
3V±0.
3V power supply (3.
3V product) • Refresh Cycles Part NO.
K4E171611D K4E171612D K4E151611D K4E151612D VCC 5V 3.
3V 5V 3.
3V 1K 16ms Refresh cycle 4K Refresh period Nor64ms 128ms L-ver RAS UCAS LCAS W FUNCTIONAL BLOCK DIAGRAM Control Clocks Vcc Vss Lower Data in Buffer Sense Amps & I/O Lower Data out Bu...


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