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K4E170411D

Samsung
Part Number K4E170411D
Manufacturer Samsung
Description 4M x 4Bit CMOS Dynamic RAM
Published Apr 25, 2005
Detailed Description K4E170411D, K4E160411D K4E170412D, K4E160412D CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION ...
Datasheet PDF File K4E170411D PDF File

K4E170411D
K4E170411D

Overview
K4E170411D, K4E160411D K4E170412D, K4E160412D CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4.
194,304 x 4 bit Extended Data Out CMOS DRAMs.
Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.
Power supply voltage (+5.
0V or +3.
3V), refresh cycle (2K Ref.
or 4K Ref.
), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family.
All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version.
This 4Mx4 EDO DRAM fa...


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