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K4M56163PE-F1L

Samsung
Part Number K4M56163PE-F1L
Manufacturer Samsung
Description 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Published Apr 25, 2005
Detailed Description K4M56163PE - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with ...
Datasheet PDF File K4M56163PE-F1L PDF File

K4M56163PE-F1L
K4M56163PE-F1L

Overview
K4M56163PE - R(B)G/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 1.
8V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-.
CAS latency (1, 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
-.
PASR (Partial Array Self Refresh).
-.
Internal TCSR (Temperature Compensated Self Refresh) -.
DS (Driver Strength) • DQM for masking.
• Auto refresh.
• • • • 64ms refresh period (8K cycle).
Commercial Temperature Operation (-25°C ~ 70°C).
Extended Temperature Operation (-25°C ~ 85°C).
54Balls FBGA with 0.
8mm ball pitch ( -RXXX : Leaded, -BXXX : Lead Free).
Mobile-SDRAM GENERAL DESCRIPTION The K4M56163PE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.
Synchronous design make a device controlled precisely with the use of system clock and I/O transactions are possible on every clock cycle.
The range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.
ORDERING INFORMATION Part No.
K4M56163PE-R(B)G/F90 K4M56163PE-R(B)G/F1L Max Freq.
111MHz(CL=3), 83MHz(CL=2) 105MHz(CL=3), 66MHz(CL=2)*1 Interface LVCMOS Package 54 FBGA Leaded (Lead Free) - R(B)G : Low Power, Extended Temperature(-25°C ~ 85°C) - R(B)F : Low Power, Commercial Temperature(-25°C ~ 70°C) Notes : 1.
In case of 40MHz Frequency, CL1 can be supported.
2.
Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.
Please contact to the memory marketing team in samsung electronics ...


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