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K9XXG16UXM-K

Samsung
Part Number K9XXG16UXM-K
Manufacturer Samsung
Description 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Published Apr 25, 2005
Detailed Description K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 1...
Datasheet PDF File K9XXG16UXM-K PDF File

K9XXG16UXM-K
K9XXG16UXM-K

Overview
K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.
0 0.
1 History 1.
Initial issue 1.
IOL(R/B) of 1.
8V device is changed.
-min.
Value: 7mA -->3mA -typ.
Value: 8mA -->4mA Draft Date Aug.
30.
2001 Nov.
5.
2001 Remark Advance 0.
2 1.
5th cycle of ID is changed : 40h --> 44h 1.
Add WSOP Package Dimensions.
1.
Add two-K9K2GXXU0M-YCB0/YIB0 Stacked Package 1.
Min valid block of K9W4GXXU1M-YCB0/YIB0 is changed .
- min.
4016 --> 4036 1.
Each K9K2GXXX0M chip in the K9W4GXXU1M has Maximum 30 Jan.
23.
2002 0.
3 0.
4 0.
5 May.
29.
2002 Aug.
13.
2002 Aug.
22.
2002 0.
6 Nov.
07.
2002 invalid blocks.
2.
K9W4GXXU1M’s ID is changed (Before) Device K9W4G08U1M K9W4G16U1M (After) Device K9W4G08U1M K9W4G16U1M 2nd Cycle 3rd cycle DAh CAh C1 C1 4th Cycle 15h 55h 5th Cycle 44h 44h 2nd Cycle 3rd cycle 4th Cycle 5th Cycle DCh CCh C3 C3 15h 55h 4Ch 4Ch 0.
7 1.
Add the Rp vs tr ,tf & Rp vs ibus...


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