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LB401

Part Number	LB401
Manufacturer	Polyfet RF Devices
Description	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Published	Apr 25, 2005
Detailed Description	polyfet rf devices LB401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
Datasheet	LB401 PDF File

Overview

polyfet rf devices LB401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 130.
0 Watts Push - Pull Package Style LB HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 230 Watts Junction to Case Thermal Resistance o 0.
75 C/W Maximum Junction Temperature o ...

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