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PDTA124EEF

NXP
Part Number PDTA124EEF
Manufacturer NXP
Description PNP resistor-equipped transistor
Published Mar 22, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA124EEF PNP resistor-equipped transistor Product specification 2001 Jun 1...
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PDTA124EEF
PDTA124EEF

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA124EEF PNP resistor-equipped transistor Product specification 2001 Jun 11 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typical 22 kΩ each) • Simplification of circuit design • Reduces number of components and board space.
APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configuration without use of external resistors.
DESCRIPTION PNP resistor equipped transistor in an SC-89 (SOT490) plastic package.
MARKING TYPE NUMBER PDTA124EEF 3R 1 2 MGA893 - 1 PDTA124EEF PINNING PIN 1 2 3 base/input emitter/ground (+) collector/output DESCRIPTION handbook, halfpage 3 R1 1 R2 3 1 Top view 2 MAM413 2 Fig.
1 Simplified outline (SC-89; SOT490) and symbol.
MARKING CODE 3 Fig.
2 Equivalent circuit.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1.
Refer to SC-89 (SOT490) standard mounting conditions.
2001 Jun 11 2 output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 − − − − − −65 − −65 +10 −40 −100 −100 250 +150 150 +150 V V mA mA mW °C °C °C CONDITIONS open emitter open base open collector − − − MIN.
MAX.
−50 −50 −10 V V V UNIT Philips Semiconductors Product specification PNP resistor-equipped transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Refer to SC-89 (SOT490) standard mounting conditions.
CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage input-off voltage input-on...


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