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LPV3000

Filtronic Compound Semiconductors
Part Number LPV3000
Manufacturer Filtronic Compound Semiconductors
Description 2W Power PHEMT
Published Apr 25, 2005
Detailed Description Filtronic Solid State FEATURES DRAIN PAD (x4) LP3000/LPV3000 2W Power PHEMT • • • • • +33.5 dBm Typical Power at 18 G...
Datasheet PDF File LPV3000 PDF File

LPV3000
LPV3000

Overview
Filtronic Solid State FEATURES DRAIN PAD (x4) LP3000/LPV3000 2W Power PHEMT • • • • • +33.
5 dBm Typical Power at 18 GHz 7 dB Typical Power Gain at 18 GHz +30.
5 dBm at 3.
3V Battery Voltage Low Intermodulation Distortion 45% Power-Added-Efficiency at 18 GHz SOURCE BOND PAD (x2) GATE PAD (x4) DIE SIZE: 28.
3 x 16.
5 mils (720 x 420 µm) DIE THICKNESS: 2.
6 mils (65 µm typ.
) BONDING PADS: 1.
9 x 2.
4 mils (50 x 60 µm typ.
) DESCRIPTION AND APPLICATIONS The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.
25 µm by 3000 µm Schottky barrier gate.
The recessed “mushroom”...


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