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LS103B-GS08

Vishay Siliconix
Part Number LS103B-GS08
Manufacturer Vishay Siliconix
Description Small Signal Schottky Barrier Diodes
Published Apr 25, 2005
Detailed Description VISHAY LS103A / 103B / 103C Vishay Semiconductors Small Signal Schottky Barrier Diodes Features • • • • Integrated pr...
Datasheet PDF File LS103B-GS08 PDF File

LS103B-GS08
LS103B-GS08

Overview
VISHAY LS103A / 103B / 103C Vishay Semiconductors Small Signal Schottky Barrier Diodes Features • • • • Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop 9612009 Applications HF-Detector Protection circuit Small battery charger AC-DC / DC-DC converters Mechanical Data Case:QuadroMELF Glass Case (SOD-80) Weight: approx.
34 mg Cathode Band Color: Black Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 2.
5 k per 7" reel (8 mm tape), 12.
5 k/box Parts Table Part LS103A LS103B LS103C Type differentiation VR = 40 V, VF @ IF 20 mA max.
0.
37 V VR = 30 V, VF @ IF 20 mA max.
0.
37 V VR = 20 V, VF @ IF 20 mA max.
0.
37 V Ordering code LS103A-GS18 or LS103A-GS08 LS103B-GS18 or LS103B-GS08 LS103C-GS18 or LS103C-GS08 Remarks Tape and Reel Tape and Reel Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Test condition Part LS103A LS103B LS103C Peak forward surge current Power dissipation tp = 300 µs, square pulse l = 4 mm, TL = constant Symbol VR VR VR IFSM Ptot Value 40 30 20 15 400 Unit V V V A mW Document Number 85631 Rev.
1.
2, 22-Apr-04 www.
vishay.
com 1 LS103A / 103B / 103C Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction ambient Junction temperature Storage temperature range Test condition l = 4mm, TL = constant Symbol RthJA Tj Tstg Value 250 125 - 65 to + 150 VISHAY Unit K/W °C °C Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse Breakdown Voltage Test condition IR = 10 µA Part LS103A LS103B LS103C Leakage current VR = 30 V VR = 20 V VR = 10 V Forward voltage drop Diode capacitance Reverse recovery time IF = 20 mA IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 50 to 200 mA, recover to 0.
1 IR LS103A LS103B LS103C Symbol V(BR)R V(BR)R V(BR)R IR IR IR VF VF CD trr 50 10 Min 40 30 20 5 5 5 0.
37 0.
6 Typ.
Max Unit V V V µA µA µA V V pF ns ...


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