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LT1001A

Advanced Semiconductor
Part Number LT1001A
Manufacturer Advanced Semiconductor
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
Published Apr 25, 2005
Detailed Description LT1001A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 B ØA 45° C DESCRIPTION: E ØD The ASILT1001A is a H...
Datasheet PDF File LT1001A PDF File

LT1001A
LT1001A

Overview
LT1001A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 B ØA 45° C DESCRIPTION: E ØD The ASILT1001A is a High Frequency Transistor Designed for High Gain Low Noise CATV, and MATV Amplifier Applications.
F G H MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC 200 mA 20 V 2.
5 W @ TC = 50 C -65 °C to +200 °C -65 °C to +200 °C 70 °C/W O DIM A B C D E F G H .
016 / 0.
407 .
029 / 0.
740 .
028 / 0.
720 .
335 / 8.
510 .
305 / 7.
750 .
240 / 6.
100 .
500 / 12.
700 .
020 / 0.
508 MINIMUM inches / mm MAXIMUM inches / mm .
200 / 5.
080 .
045 / 1.
140 .
034 / 0.
860 .
370 / 9.
370 .
335 / 8.
500 .
260 / 6.
600 1 = EMITTER 2 = BASE 3 = COLLECTOR(CASE) NONE CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICBO hFE VCE(SAT) ft Ccb NF GUmax TA = 25 °C TEST CONDITIONS IC = 5.
0 mA IC = 1.
0 mA IE = 100 µA VCB = 10 V VCE = 5.
0 V IC = 50 mA VCE = 14 V VCB = 10 V VCE = 8.
0 V VCE = 14 V IC = 50 mA IC = 90 mA IC = 50 mA IB = 5.
0 mA IC = 90 mA f = 300 MHz f = 1.
0 MHz f = 300 MHz f = 300 MHz MINIMUM 20 40 3.
5 TYPICAL MAXIMUM U...


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