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MBR60100CT

Vishay Siliconix
Part Number MBR60100CT
Manufacturer Vishay Siliconix
Description Dual High-Voltage Schottky Rectifiers
Published Apr 26, 2005
Detailed Description www.vishay.com MBR60100CT Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier TO-220AB ...
Datasheet PDF File MBR60100CT PDF File

MBR60100CT
MBR60100CT

Overview
www.
vishay.
com MBR60100CT Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier TO-220AB PIN 1 PIN 3 1 23 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max.
Package Diode variations 2 x 30 A 100 V 350 A 0.
64 V 175 °C TO-220AB Common cathode FEATURES • Power pack • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application.
MECHANICAL DATA Case: TO-220AB Epoxy meets UL 94 V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current total device per diode Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse current per diode at tp = 2 μs, 1 kHz Peak non-repetitive reverse surge energy per diode (8/20 μs waveform) Non-repetitive avalanche energy per diode at 25 °C, IAS = 1.
0 A, L = 40 mH Voltage rate of change (rated VR) Operating junction and storage temperature range SYMBOL VRRM VRWM VDC IF(AV) IFSM IRRM ERSM EAS dV/dt TJ, TSTG MBR60100CT 100 100 100 60 30 350 1.
0 25 20 10 000 - 65 to + 175 UNIT V V V A A A mJ mJ V/μs °C Revision: 13-Aug-13 1 Document Number: 88892 For technical questions within your region: DiodesAmericas@vishay.
com, DiodesAsia@vishay.
com, DiodesEurope@vishay.
com THIS DOCUMENT...


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