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MBV109T1

Leshan Radio Company
Part Number MBV109T1
Manufacturer Leshan Radio Company
Description Silicon Epicap Diode
Published Apr 26, 2005
Detailed Description LESHAN RADIO COMPANY, LTD. Silicon Epicap Diode Designed for general frequency control and tuning applications; providi...
Datasheet PDF File MBV109T1 PDF File

MBV109T1
MBV109T1

Overview
LESHAN RADIO COMPANY, LTD.
Silicon Epicap Diode Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies • Controlled and Uniform Tuning Ratio • Available in Surface Mount Package MMBV109LT1 MBV109T1 MV209 26–32 pF VOLTAGE VARIABLE CAPACITANCE DIODES 3 CATHODE 1 ANODE MAXIMUM RATINGS Rating Symbol Value MBV109T1 MMBV109LT1 MV209 Reverse Voltage Forward Current Device Dissipation @T A = 25°C Derate above 25°C VR IF PD 280 2.
8 30 200 200 200 2.
0 1.
6 Junction Temperature Storage Temperature Range DEVICEMARKING TJ T stg +125 –55 to +150 MBV109T1= J4A, MMBV109LT1 =M4A, MV209 = MV209 ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Characteristic Symbol Min Reverse Breakdown Voltage ( I R = 10 µ Adc) Reverse Voltage Leakage Current ( V R = 25Vdc) Diode Capacitance Temperature Coefficient (V R = 3.
0 Vdc,...


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