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PEMD10

NXP
Part Number PEMD10
Manufacturer NXP
Description NPN/PNP resistor-equipped transistors
Published Mar 22, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMD10 NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ Preli...
Datasheet PDF File PEMD10 PDF File

PEMD10
PEMD10

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMD10 NPN/PNP resistor-equipped transistors; R1 = 2.
2 kΩ, R2 = 47 kΩ Preliminary specification 2001 Sep 11 Philips Semiconductors Preliminary specification NPN/PNP resistor-equipped transistors; R1 = 2.
2 kΩ, R2 = 47 kΩ FEATURES • 300 mW total power dissipation • Very small 1.
6 × 1.
2 mm ultra thin package • Excellent coplanarity due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs.
APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver.
DESCRIPTION NPN/PNP resistor-equipped transistors in a SOT666 plastic package.
TR1 handbook, halfpage PEMD10 QUICK REFERENCE DATA SYMBOL VCEO ICM R1 R2 PINNING PIN 1, 4 2, 5 6, 3 SYMBOL TR1; TR2 TR1; TR2 TR1; TR2 base collector DESCRIPTION emitter PARAMETER collector-emitter voltage peak collector current bias resistor bias resistor MAX.
50 100 2.
2 47 UNIT V mA...


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