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PESD12VS2UAT

NXP
Part Number PESD12VS2UAT
Manufacturer NXP
Description Double ESD protection diodes in SOT23 package
Published Mar 22, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET PESDxS2UAT series Double ESD protection diodes in SOT23 package Product specificatio...
Datasheet PDF File PESD12VS2UAT PDF File

PESD12VS2UAT
PESD12VS2UAT


Overview
DISCRETE SEMICONDUCTORS DATA SHEET PESDxS2UAT series Double ESD protection diodes in SOT23 package Product specification 2004 Feb 18 Philips Semiconductors Product specification Double ESD protection diodes in SOT23 package FEATURES • Unidirectional ESD protection of up to two lines • Common-cathode configuration • Max.
peak pulse power: Ppp = 330 W at tp = 8/20 µs • Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A • Ultra-low reverse leakage current: IRM < 700 nA • ESD protection > 30 kV • IEC 61000-4-2; level 4 (ESD) • IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs.
PINNING APPLICATIONS • Computers and peripherals • Communication systems • Audio and video equipment • Data lines • CA...



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