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PF00105A

Hitachi Semiconductor
Part Number PF00105A
Manufacturer Hitachi Semiconductor
Description MOS FET Power Amplifier Module for AMPS Handy Phone
Published Mar 22, 2005
Detailed Description PF00105A MOS FET Power Amplifier Module for AMPS Handy Phone ADE-208-447C (Z) 4th Edition February 1998 Features • • • ...
Datasheet PDF File PF00105A PDF File

PF00105A
PF00105A

Overview
PF00105A MOS FET Power Amplifier Module for AMPS Handy Phone ADE-208-447C (Z) 4th Edition February 1998 Features • • • • • Low voltage operation : 4.
6 V 2 stage amplifier : +8 dBm input Lead less small package : 0.
2 cc High efficiency : 48% Typ at 1 W Low power control current : 500 µA Typ Pin Arrangement • RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 1 4.
5 20 –30 to +100 –30 to +100 2 Unit V A V mW °C °C W PF00105A Electrical Characteristics (Tc = 25°C) Item Frequency range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power Symbol f I DS ηT 2nd H.
D.
3rd H.
D.
VSWR (in) Pout Min 824 — 45 — — — 1.
0 Typ — — 48 –40 –40 1.
5 1.
1 Max 849 20 — –30 –30 3.
0 — Unit MHz µA % dBc dBc — W Pin = +8 dBm, V DD = 4.
6 V, VAPC = 3 V, RL = Rg = 50Ω, Tc = 25°C Pin = +8 dBm, V DD = 4.
6 V, VAPC = 0.
1 V, RL = Rg = 50Ω, Tc = 25°C Pin = +8 dBm, V DD = 4.
3 to 6 V, Pout ≤ 1.
2 W (at APC controlled), Rg = 50 Ω, Tc = 25°C, Output VSWR = 3 : 1 All phases Pin = +8 dBm, V DD = 4.
3 to 6 V, Pout ≤ 1.
2 W (at APC controlled), Rg = 50 Ω, Tc = 25°C, Output VSWR = 10 : 1 All phases Test Condition — VDD = 7 V, VAPC = 0 V Pin = +8 dBm, V DD = 4.
6 V, Pout = 1 W (at APC controlled) RL = Rg = 50Ω, Tc = 25°C Isolation — — –20 +6 dBm Stability — No parasitic oscillation — Load VSWR tolerance — No parasitic oscillation — 2 PF00105A Characteristic Curves ηT vs.
Tc Pin=+7dBm Vdd=4.
6V Pout=1W 55 824MHz 849MHz 60 ηT (%) 50 45 40 −50 0 Tc (°C) Pout vs.
Tc 50 100 1.
6 Pin=+7dBm Vdd=4.
6V 1.
5 Vapc=2.
9V 1.
4 Pout(1) (W) 1.
3 1.
2 1.
1 1 0.
9 0.
8 −50 824MHz 849MHz 0 Tc (°C) 50 100 3 PF00105A Pout vs.
Pin (1) 31.
8 Vdd=4.
6V Vapc=2.
9V Tc=−30°C 31.
6 Pout(1) (dBm) 824MHz 836.
5MHz 849MHz 31.
4 31.
2 31 4 6 Pin (dBm) Pou...


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