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M58CR064P

ST Microelectronics
Part Number M58CR064P
Manufacturer ST Microelectronics
Description 64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory
Published Apr 26, 2005
Detailed Description M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory FEATURES SUMMAR...
Datasheet PDF File M58CR064P PDF File

M58CR064P
M58CR064P

Overview
M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.
8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.
65V to 2V for Program, Erase and Read – VDDQ = 1.
65V to 3.
3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1.
Package SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode : 54MHz – Asynchronous/ Synchronous Page Read mode – Random Access: 85, 90, 100, 120ns FBGA s PROGRAMMING TIME – 10µs by Word typical – Double/Quadruple Word Program option TFBGA56 (ZB) 6.
5 x 10mm s MEMORY BLOCKS – Dual Bank Memory Array: 16/48 Mbit – Parameter Blocks (Top or Bottom location) s DUAL OPERATIONS – Program Erase in one Bank while Read in other – No delay between Read and Write operations s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M58CR064C: 88CAh – Bottom Device Code, M58CR064D: 88CBh – Top Device Code, M58CR064P: 8801h – Bottom Device Code, M58CR064Q: 8802h s BLOCK LOCKING – All blocks locked at Power up – Any combination of blocks can be locked – WP for Block Lock-Down s SECURITY – 128 bit user programmable OTP cells – 64 bit unique device number – One parameter block permanently lockable s s COMMON FLASH INTERFACE (CFI) 100,000 PROGRAM/ERASE CYCLES per BLOCK June 2003 1/70 M58CR064C, M58CR064D, M58CR064P, M58CR064Q TABLE OF CONTENTS SUMMARY DESCRIPTION .
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6 Figure 2.
Logic Diagram .
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7 Table 1.
Signal Names .
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7 Figure 3.
TFBGA Connections (Top view through package) .
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8 Table 2.
Bank Architecture .
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