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M58MR064D

ST Microelectronics
Part Number M58MR064D
Manufacturer ST Microelectronics
Description 64 Mbit 4Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory
Published Apr 26, 2005
Detailed Description M58MR064C M58MR064D 64 Mbit (4Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory s SUPPLY VOLTAGE – VDD = VDDQ...
Datasheet PDF File M58MR064D PDF File

M58MR064D
M58MR064D

Overview
M58MR064C M58MR064D 64 Mbit (4Mb x16, Mux I/O, Dual Bank, Burst) 1.
8V Supply Flash Memory s SUPPLY VOLTAGE – VDD = VDDQ = 1.
65V to 2.
0V for Program, Erase and Read s s – VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA SYNCHRONOUS / ASYNCHRONOUS READ – Burst mode Read: 54MHz – Page mode Read (4 Words Page) – Random Access: 100ns FBGA TFBGA48 (ZC) 10 x 4 ball array s PROGRAMMING TIME – 10µs by Word typical – Two or four words programming option s MEMORY BLOCKS – Dual Bank Memory Array: 16/48 Mbit – Parameter Blocks (Top or Bottom location) Figure 1.
Logic Diagram s DUAL OPERATIONS – Read within one Bank while Program or Erase within the other – No delay between Read and Write operations VDD VDDQ VPP 6 A16-A21 W E G RP WP L K M58MR064C M58MR064D BINV WAIT 16 ADQ0-ADQ15 s PROTECTION/SECURITY – All Blocks protected at Power-up – Any combination of Blocks can be protected – 64 bit unique device identifier – 64 bit user programmable OTP cells – One parameter block permanently lockable s s COMMON FLASH INTERFACE (CFI) 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M58MR064C: 88DCh – Bottom Device Code, M58MR064D: 88DDh s VSS AI90087 March 2002 1/52 M58MR064C, M58MR064D Figure 2.
TFBGA Connections (Top view through package) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 A DU DU B DU DU C WAIT A21 VSS K VDD W VPP A19 A17 NC D VDDQ A16 A20 L BINV RP WP A18 E VSS E VSS ADQ7 ADQ6 ADQ13 ADQ12 ADQ3 ADQ2 ADQ9 ADQ8 G F ADQ15 ADQ14 VSS ADQ5 ADQ4 ADQ11 ADQ10 VDDQ ADQ1 ADQ0 G DU DU H DU DU AI90088 DESCRIPTION The M58MR064 is a 64 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.
65V to 2.
0V VDD supply for the circuitry.
For Program and Erase operations the necessary high voltages are generated internally.
The device supports synchronous burst read and as...


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