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M5M4V16169DRT-8

Mitsubishi
Part Number M5M4V16169DRT-8
Manufacturer Mitsubishi
Description 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
Published Apr 26, 2005
Detailed Description MITSUBISHI LSIs M5M4V16169DTP/RT-7,-8,-10,-15 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT...
Datasheet PDF File M5M4V16169DRT-8 PDF File

M5M4V16169DRT-8
M5M4V16169DRT-8


Overview
MITSUBISHI LSIs M5M4V16169DTP/RT-7,-8,-10,-15 16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec.
and some of the contents are subject to change without notice.
PINCONFIGURATION (TOP VIEW) Vcc DQCl DQCu CC1# CC0# WE# CS# CMd# CMs# K DQ0 Vss DQ1 DQ2 VddQ DQ3 Vss DQ4 VccQ DQ5 DQ6 Vss DQ7 MCL As0 As1 As2 RAS# CAS# DTD# Ad0 Ad1 Ad2 Vcc 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 70 69 68 67 66 65 64 63 62 61 60 59 58 DESCRIPTION 1.
The M5M4V16169DTP/RT is a 16M-bit Cached DRAM which integrates input registers, a 1,048,576-word by 16-bit dynamic memory array and a 1024- word by 16-bit static RAM array as a Cache memory (block size 8x16) onto a single monolithic circuit.
The block data transfer between the DRAM and the data transfer buffers (RB1/RB2/WB1/WB2) is performed in one instruction cycle, a fundamental advantage over a conventional DRAM/SRAM cache.
The RAM is fabricated with a high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low cost are essential.
The use of quadruple-layer polysilicon process combined with silicide and double layer aluminum wiring technology, a single-transistor dynamic storage stacked capacitor cell, and a six-transistor static storage cache cell provide high circuit density at reduced costs.
2.
400 mil 70Pin TSOP Type II 0.
65mm Lead Pitch 57 56 55 54 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 Vss Ad9 Ad8 Ad7 Ad11 Ad10 As9 As8 As7 As6 DQ15 Vss DQ14 DQ13 VccQ DQ12 Vcc DQ11 VccQ DQ10 DQ9 Vss DQ8 MCH G# As5 As4 As3 Ad6 Ad5 Ad4 Ad3 ADF# Vss FEATURES Type name M5M4V16169TP/RT-7 M5M4V16169TP/RT-8 M5M4V16169TP/RT-10 M5M4V16169TP/RT-15 SRAM Access/cycle 5.
6ns/7ns 6.
4ns/8ns 8.
0ns/10ns 8.
0ns/15ns DRAM Access/cycle 49ns/70ns 56ns/80ns 60ns/90ns 75ns/120ns Power Dissipation (Typ) DRAM: 530 SRAM: 860 DRAM: 500 SRAM: 800 DRAM: 430 SRAM: 660...


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