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PHB11N50E

NXP
Part Number PHB11N50E
Manufacturer NXP
Description PowerMOS transistors Avalanche energy rated
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanc...
Datasheet PDF File PHB11N50E PDF File

PHB11N50E
PHB11N50E

Overview
Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHB11N50E, PHW11N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 10.
9 A RDS(ON) ≤ 0.
55 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.
V.
and computer monitor power supplies, d.
c.
to d.
c.
converters, motor control circuits and general purpose switching applications.
The PHW11N50E is supplied in the SOT429 (TO247) conventional leaded package.
The PHB11N50E is supplied in the SOT404 surface mounting package.
PINNING PIN 1 2 3 tab DESCRIPTION gate drain1 source SOT404 tab SOT429 (TO247) 2 drain 1 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN.
- 55 MAX.
500 500 ± 30 10.
9 6.
9 44 156 150 UNIT V V V A A A W ˚C 1 It is not possible to make connection to pin 2 of the SOT404 package.
December 1998 1 Rev 1.
000 Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS EAR IAS, IAR Non-repetitive avalanche energy CONDITIONS PHB11N50E, PHW11N50E MIN.
- MAX.
707 18 10.
9 UNIT mJ mJ A Unclamped inductive load, IAS = 10.
9 A; tp = 0.
2 ms; Tj prior to avalanche = 25˚C; VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V Repetitive avalanche energy2 IAR = 10.
9 A; tp = 2.
5 µs; Tj pri...


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