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PHB12NQ15T

NXP
Part Number PHB12NQ15T
Manufacturer NXP
Description N-channel TrenchMOS transistor
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP12NQ15T, PHB12NQ15T PHD12NQ15T QUICK ...
Datasheet PDF File PHB12NQ15T PDF File

PHB12NQ15T
PHB12NQ15T

Overview
Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP12NQ15T, PHB12NQ15T PHD12NQ15T QUICK REFERENCE DATA d FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL VDSS = 150 V ID = 12.
5 A g RDS(ON) ≤ 200 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.
The device has very low on-state resistance.
It is intended for use in dc to dc converters and general purpose switching applications.
The PHP12NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB12NQ15T is supplied in the SOT404 (D2PAK) surface mounting ...


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