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PHB18NQ10T

NXP
Part Number PHB18NQ10T
Manufacturer NXP
Description N-channel TrenchMOS transistor
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP18NQ10T, PHB18NQ10T PHD18NQ10T QUICK ...
Datasheet PDF File PHB18NQ10T PDF File

PHB18NQ10T
PHB18NQ10T

Overview
Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP18NQ10T, PHB18NQ10T PHD18NQ10T QUICK REFERENCE DATA d FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL VDSS = 100 V ID = 18 A g RDS(ON) ≤ 90 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.
Applications:• d.
c.
to d.
c.
converters • switched mode power supplies The PHP18NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB18NQ10T is supplied in the SOT404 (D2PAK) surface mounting package.
The PHD18NQ10T is supplied in the SOT428 (DPAK) surface mou...


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