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MA2D755

Panasonic
Part Number MA2D755
Manufacturer Panasonic
Description Schottky Barrier Diodes
Published Apr 27, 2005
Detailed Description Schottky Barrier Diodes (SBD) MA2D755 Silicon epitaxial planar type Unit : mm For switching power supply 9.9 ± 0.3 4.6...
Datasheet PDF File MA2D755 PDF File

MA2D755
MA2D755

Overview
Schottky Barrier Diodes (SBD) MA2D755 Silicon epitaxial planar type Unit : mm For switching power supply 9.
9 ± 0.
3 4.
6 ± 0.
2 13.
7 ± 0.
2 4.
2 ± 0.
2 • TO-220D Package • Allowing to rectify under (IF(AV) = 5 A) condition • VR = 60 V guaranteed • Single type 15.
0 ± 0.
5 I Features φ 3.
2 ± 0.
1 1.
5 − 0.
4 +0 3.
0 ± 0.
5 2.
9 ± 0.
2 2.
6 ± 0.
1 1.
4 ± 0.
2 0.
8 ± 0.
1 I Absolute Maximum Ratings Ta = 25°C Parameter Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VRRM IF(AV) IFSM Tj Tstg Rating 60 5 90 −40 to +125 −40 to +125 Unit V A A °C °C 0.
55 ± 0.
15 5.
08 ± 0.
5 2.
54 ± 0.
3 1 2 1 : Cathode 2 : Anode TO-220D Package (2-pin) Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Thermal resistance Symbol IR VF Rth(j-c) VR = 60 V IF = 5 A Direct current (between junction and case) Conditions Min Typ Max 3 0.
58 3 Unit mA V °C/W Note) Rated input/output frequency: 150 kHz 1 MA2D755 IF  V F 102 102 Schottky Barrier Diodes (SBD) IR  V R 600 Ct  VR Ta = 125°C 10 Reverse current IR (mA) Forward current IF (A) 25°C 10 75°C 1 Terminal capacitance Ct (pF) Ta = 125°C 500 400 1 300 10−1 10−1 25°C 200 10−2 10−2 100 10−3 0 0.
2 0.
4 0.
6 0.
8 1.
0 1.
2 10−3 0 10 20 30 40 50 60 0 0 10 20 30 40 50 60 Forward voltage VF (V) Reverse voltage VR (V) Reverse voltage VR (V) 2 ...


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