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MA2S304

Panasonic
Part Number MA2S304
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description Variable Capacitance Diodes MA2S304 Silicon epitaxial planar type Unit : mm For VCO 0.15 min. 0.15 min. • Good linear...
Datasheet PDF File MA2S304 PDF File

MA2S304
MA2S304

Overview
Variable Capacitance Diodes MA2S304 Silicon epitaxial planar type Unit : mm For VCO 0.
15 min.
0.
15 min.
• Good linearity and large capacitance-ratio in CD  VR relation • Small series resistance rD • SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.
27 − 0.
02 0.
8 ± 0.
1 + 0.
05 I Features 1.
3 ± 0.
1 1.
7 ± 0.
1 Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 30 150 −55 to +150 Unit V °C °C 0.
7 ± 0.
1 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol: K I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(4V) Capacitance ratio Series resistance* CD(1V)/CD(4V) rD VR = 4 V, f = 100 MHz VR = 28 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz 24.
8 6.
0 3.
0 1.
0 Conditions Min Typ Max 10 29.
8 8.
3 Unit nA pF pF  Ω Note) 1 Rated input/output frequency: 100 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0 to 0.
1 0.
13 − 0.
02 + 0.
05 I Absolute Maximum Ratings Ta = 25°C 0.
27 − 0.
02 + 0.
05 1 MA2S304 CD  VR 100 f = 1 MHz Ta = 25°C 120 25°C Ta = 60°C − 40°C Variable Capacitance Diodes IF  V F 1.
04 CD  Ta f = 1 MHz VR = 4 V 1V 50 100 1.
03 Diode capacitance CD (pF) 30 20 Forward current IF (mA) 10 60 CD(Ta) CD(Ta = 25°C) 0 0.
2 0.
4 0.
6 0.
8 1.
0 1.
2 80 1.
02 1.
01 5 3 2 40 1.
00 20 0.
99 1 0 0 4 8 12 16 20 24 28 32 36 40 0.
98 0 20 40 60 80 100 Reverse voltage VR (V) Forward voltage VF (V) Ambient temperature Ta (°C) IR  T a 100 VR = 28 V Reverse current IR (nA) 10 1 0.
1 0.
01 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 2 ...


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