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MA2SD032

Part Number	MA2SD032
Manufacturer	Panasonic
Description	Schottky Barrier Diodes (SBD) Silicon epitaxial planar type
Published	Apr 27, 2005
Detailed Description	Schottky Barrier Diodes (SBD) MA2SD32 Silicon epitaxial planar type Unit: mm For super high speed switching ■ Features...
Datasheet	MA2SD032 PDF File

Overview

Schottky Barrier Diodes (SBD) MA2SD32 Silicon epitaxial planar type Unit: mm For super high speed switching ■ Features • IF(AV) = 200 mA rectification is possible.
• Small reverse current: IR < 5 µA (at VR = 30 V) 0.
80±0.
05 0.
60+0.
05 –0.
03 0.
80+0.
05 –0.
03 1 (0.
60) 0.
12+0.
05 –0.
02 (0.
80) (0.
60) 0.
01±0.
01 5˚ ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current * Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFM IFSM Tj Tstg Rating 30 30 200 300 1 125 −55 to +125 Unit V V 5˚ 2 0.
30±0.
05 0+0 –0.
05 0.
01±0.
01 mA mA A °C °C 1: Anode 2: Cathode SSMini2-F1 Package Marking Symbol: 8H Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current Symbol IR1 IR2 Forward voltage Terminal capacitance Reverse recovery time * VF Ct trr VR = 10 V VR = 30 V IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 0.
49 25 2 Conditions Min Typ Max 0.
5 5 0.
56 V pF ns Unit µA Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.
This product is sensitive to electric shock (static electricity, etc.
).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.
3.
Absolute frequency of input and output is 250 MHz 4.
*: trr measurement circuit Bias Application Unit (N-50BU) tr Input Pulse tp 10% t IF Output Pulse trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω Pulse Generator (PG-10N) Rs = 50 Ω A Wave Form Analyzer (SAS-8130) V R Ri = 50 Ω 90% tp = 2 µs tr = 0.
35 ns δ = 0.
05 Publication date: October 2003 SKH00132AED (0.
15) 1.
20+0.
05 –0.
03 1.
60±0.
05 1 MA2SD32 IF  V F 103 Ta = 125°C 75°C 25°C I R  VR 103 Ta = 125°C Ct  VR 25 Ta = 25°C 102 10 10 75°C Terminal capacitance Ct (pF) 30 102 ...

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MA2SD032 Schottky Barrier Diodes (SBD) Silicon epitaxial planar type - Panasonic

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