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PHB3N50E

NXP
Part Number PHB3N50E
Manufacturer NXP
Description PowerMOS transistors Avalanche energy rated
Published Mar 22, 2005
Detailed Description Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanc...
Datasheet PDF File PHB3N50E PDF File

PHB3N50E
PHB3N50E

Overview
Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP3N50E, PHB3N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 3.
4 A RDS(ON) ≤ 3 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.
V.
and computer monitor power supplies, d.
c.
to d.
c.
converters, motor control circuits and general purpose switching applications.
The PHP3N50E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB3N50E i...


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