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MA3S795

Panasonic
Part Number MA3S795
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description Schottky Barrier Diodes (SBD) MA3S795 Silicon epitaxial planar type 0.28 ± 0.05 For switching circuits I Features • Ex...
Datasheet PDF File MA3S795 PDF File

MA3S795
MA3S795

Overview
Schottky Barrier Diodes (SBD) MA3S795 Silicon epitaxial planar type 0.
28 ± 0.
05 For switching circuits I Features • Extra-small SS-mini type 3-pin package, allowing high-density mounting • Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) 1.
60 − 0.
03 0.
80 0.
80 0.
51 0.
51 0.
80 1.
60 ± 0.
1 0.
80 ± 0.
05 Unit : mm 1 + 0.
05 3 2 0.
28 ± 0.
05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) For switching circuits Forward current (DC) Peak forward current Junction temperature Storage temperature Symbol VR VRM IF IFM Tj Tstg Rating 30 30 30 150 125 −55 to +125 Unit V V mA mA °C °C 0.
60 − 0.
03 0.
44 0.
44 + 0.
05 0.
88 − 0.
03 1 : Anode 2 : NC 3 : Cathode SS-Mini Type Package(3-pin) Marking Symbol: M2M Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.
9 kΩ, CL = 10 pF 1.
5 1 Conditions Min Typ Max 30 0.
3 1 Unit µA V V pF ns Detection efficiency 65 0.
12 − 0.
02 + 0.
05 + 0.
05 0.
28 ± 0.
05 % Note) 1.
Schottky barrier diode is sensitive to electric shock (static electricity, etc.
).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.
2.
Rated input/output frequency: 2 000 MHz 3.
* : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.
F.
Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.
35 ns δ = 0.
05 1 MA3S795 IF  V F 103 1.
0 Schottky Barrier Diodes (SBD) VF  Ta 104 Ta = 125°C IR  VR 102 75°C 25°C Ta = 125°C – 20°C Forward current IF (mA) 0.
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