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MA3X198

Panasonic
Part Number MA3X198
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description Switching Diodes MA3X198 Silicon epitaxial planar type For general purpose I Features • Two elements contained in one p...
Datasheet PDF File MA3X198 PDF File

MA3X198
MA3X198

Overview
Switching Diodes MA3X198 Silicon epitaxial planar type For general purpose I Features • Two elements contained in one package, allowing high-density mounting • Soft recovery characteristic (trr = 100 ns) • Can be connected in series 1.
1 − 0.
1 + 0.
2 2.
8 − 0.
3 0.
65 ± 0.
15 1.
5 + 0.
2 Unit : mm 0.
65 ± 0.
15 + 0.
25 − 0.
05 0.
95 1.
9 ± 0.
2 2.
9 − 0.
05 1 3 2 + 0.
2 0.
95 1.
45 0 to 0.
1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Single Series Single Series Single Series Tj Tstg IFSM IFRM Symbol VR VRRM IF(AV) Rating 40 40 100 75 225 170 500 325 150 −55 to +150 °C °C mA mA Unit V V mA 0.
1 to 0.
3 0.
4 ± 0.
2 Marking Symbol: M2F Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 40 V IF = 100 µA IR = 100 mA VR = 6 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.
1 · IR, RL = 100 Ω 1 0.
65 Conditions Min Typ Max 10 0.
72 1.
2 2 100 Unit nA V V pF ns Note) 1.
Rated input/output frequency: 100 MHz 2.
* : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.
1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.
F.
Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.
35 ns δ = 0.
05 0.
8 1 : Anode 1 2 : Cathode 2 3 : Cathode 1 JEDEC : TO-236 Anode 2 EIAJ : SC-59A Mini Type Package (3-pin) 0.
16 − 0.
06 + 0.
1 0.
4 − 0.
05 + 0.
1 1 MA3X198 IF  V F 103 102 Switching Diodes IR  V R 1.
6 1.
4 VF  Ta 102 Forward current IF (mA) Forward voltage VF (V) Reverse current IR (nA) 10 Ta = 150°C 1.
2 1.
0 0.
8 10 mA 0.
6 0.
4 0.
2 3 mA IF = 100 mA 10 Ta = 150°C 1 100°C 25°C 10−1 − 20°C 1 100°C 25°C 10−1 10−2 0 0.
2 0.
4 0.
6 0.
8 1.
0 1.
2 10−2 0 10 20 30 40 ...


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