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MA3X555

Panasonic
Part Number MA3X555
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description PIN Diodes MA3X555 Silicon epitaxial planar type For UHF and SHF bands AGC I Features • Small diode capacitance CD • La...
Datasheet PDF File MA3X555 PDF File

MA3X555
MA3X555

Overview
PIN Diodes MA3X555 Silicon epitaxial planar type For UHF and SHF bands AGC I Features • Small diode capacitance CD • Large variable range of forward dynamic resistance rf • Mini type package, allowing downsizing of equipment and automatic insertion through the taping package and magazine package 2.
8 − 0.
3 0.
65 ± 0.
15 1.
5 + 0.
2 Unit : mm 0.
65 ± 0.
15 + 0.
25 − 0.
05 0.
95 1.
9 ± 0.
2 2.
9 − 0.
05 1 3 2 + 0.
2 0.
95 1.
45 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR VRM IF PD Topr Tstg Rating 40 45 100 150 −25 to +85 −55 to +150 Unit V V mA mW °C °C 1.
1 − 0.
1 1 : Cathode 1 2 : Anode 2 3 : Cathode 2 Anode 1 Mini Type Package (3-pin) Marking Symbol: M2H Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf1 rf2 VR = 40 V IF = 100 mA VR = 15 V, f = 1 MHz IF = 10 µA, f = 100 MHz IF = 10 mA, f = 100 MHz 1 1.
05 0.
3 2 6 10 Conditions Min Typ Max 100 1.
2 0.
5 Unit nA V pF kΩ Ω Note) 1 Rated input/output frequency: 100 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0 to 0.
1 0.
1 to 0.
3 0.
4 ± 0.
2 0.
8 0.
16 − 0.
06 + 0.
2 + 0.
1 0.
4 − 0.
05 + 0.
1 1 MA3X555 IF  V F Ta = 25°C PIN Diodes CD  VR f = 1 MHz Ta = 25°C 1 1 000 2 100 IR  Ta VR = 40 V Diode capacitance CD (pF) Forward current IF (mA) 100 0.
5 0.
3 0.
2 Reverse current IR (nA) 0 4 8 12 16 20 24 28 32 36 40 10 10 1 0.
1 1 0.
1 0.
05 0.
03 0.
1 0.
02 0.
01 0 0.
4 0.
8 1.
2 1.
6 2.
0 0 20 40 60 80 100 120 140 160 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (°C) 10 k rf  I F f = 100 MHz Ta = 25°C Forward dynamic resistance rf (Ω) 1k 100 10 1 0.
01 0.
1 1 10 Forward current IF (mA) 2 ...


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