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MA4BPS301

Tyco
Part Number MA4BPS301
Manufacturer Tyco
Description PIN Diode Chips with Offset Bond Pads
Published Apr 27, 2005
Detailed Description PIN Diode Chips With Offset Bond Pads MA4BPS101, MA4BPS201, MA4BPS301 MA4BPS101, MA4BPS201, MA4BPS301 PIN Diode Chips...
Datasheet PDF File MA4BPS301 PDF File

MA4BPS301
MA4BPS301


Overview
PIN Diode Chips With Offset Bond Pads MA4BPS101, MA4BPS201, MA4BPS301 MA4BPS101, MA4BPS201, MA4BPS301 PIN Diode Chips with Offset Bond Pads Features • • • • • Bond Pads Removed From Active Junction Large Bond Pads Support Multiple Bond Wires Rugged Silicon-Glass Construction Silicon Nitride Passivation Polyimide Scratch Protection Chip Layout Description These silicon - glass PIN diode chips are fabricated with M/A-COM’s patented HMIC™ process.
They contain a single shunt silicon PIN diode embedded in a glass substrate with dual 75 x 150 micron bond pads located near the chip edges.
The large pads allow use of multiple bond wires.
The location of these pads on a glass substrate results in low parasitic capacitance.
The diode junction is passivated with silicon nitride and a layer of polyimide has been added for scratch protection during assembly.
The devices are available on industry standard tape frame for automatic insertion and assembly in high volume applications.
Absolute Maximum Rating Parameter Operating Temperature Storage Temperature Forward Current Reverse Voltage Incident RF Power Mounting Temperature 1 Applications These diodes are designed for use as general PIN elements in switches and switched pad attenuators.
The chips can handle up to 10 watts of RF power, and are well suited for use in T/R switches for subscriber phones, particularly the higher power and higher frequency systems for satellite based systems.
They are also useful for the switching element in phased array radar applications.
The larger bond pad allows for two (2) 1 mil dia contact wires which reduces the bond wire inductance almost in half.
Absolute Maximum -60°C to +150°C -65°C to +175°C 100mA 70 V +40 dBm (CW) +320°C for 10 seconds 1.
Exceeding these limits may cause permanent damage.
Electrical Specifications @ +25°C Parameters Total Capacitance 1 Series Resistance 2 Parallel Resistance Breakdown Voltage 2 Carrier Lifetime 2 Thermal Impedance Symbol CT Rs Rp Vb TL θjc Un...



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